Shopping cart

Subtotal: $0.00

STB34N65M5

STMicroelectronics
STB34N65M5 Preview
STMicroelectronics
MOSFET N-CH 650V 28A D2PAK
$6.85
Available to order
Reference Price (USD)
1,000+
$2.71810
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

STMicroelectronics

STB155N3LH6

PN Junction Semiconductor

P3M173K0K3

Fairchild Semiconductor

FQA7N80

NXP Semiconductors

BUK9E08-55B,127

Vishay Siliconix

SQJQ100EL-T1_GE3

Infineon Technologies

SPU03N60S5IN

Nexperia USA Inc.

PSMN3R9-60PSQ

Vishay Siliconix

SIHG35N60E-GE3

Texas Instruments

CSD18511KTT

Top