STB20NM60T4
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 20A D2PAK
$2.62
Available to order
Reference Price (USD)
1,000+
$3.39570
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with STB20NM60T4, a high-quality Transistors - FETs, MOSFETs - Single from STMicroelectronics. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, STB20NM60T4 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 192W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Nexperia USA Inc.
PSMN0R9-30YLDX
Microchip Technology
TP0606N3-G
Rohm Semiconductor
R6520KNZ4C13
Panjit International Inc.
PJS6461-AU_S1_000A1
Vishay Siliconix
SI7478DP-T1-E3
Rectron USA
RM1A5N30S3AE
UnitedSiC
UF3C065030B3
Infineon Technologies
IPP80N06S2LH5AKSA2
Nexperia USA Inc.
BUK9Y3R0-40E,115
STMicroelectronics