RM1A5N30S3AE
Rectron USA
Rectron USA
MOSFET N-CH 30V 1.5A/1.4A SOT323
$0.04
Available to order
Reference Price (USD)
1+
$0.03900
500+
$0.03861
1000+
$0.03822
1500+
$0.03783
2000+
$0.03744
2500+
$0.03705
Exquisite packaging
Discount
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Discover high-performance RM1A5N30S3AE from Rectron USA, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RM1A5N30S3AE delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 144mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta), 500mW (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
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