PSMN0R9-30YLDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 300A LFPAK56
$2.62
Available to order
Reference Price (USD)
1,500+
$0.77550
3,000+
$0.72380
7,500+
$0.68761
10,500+
$0.66176
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose PSMN0R9-30YLDX by Nexperia USA Inc.. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with PSMN0R9-30YLDX inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 291W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56; Power-SO8
- Package / Case: SOT-1023, 4-LFPAK
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