SSM6K406TU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 4.4A UF6
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
Discount
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Boost your electronic applications with SSM6K406TU,LF, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SSM6K406TU,LF meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UF6
- Package / Case: 6-SMD, Flat Leads
