IRF830PBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 500V 4.5A TO220AB
$1.66
Available to order
Reference Price (USD)
1+
$1.38000
50+
$1.10540
100+
$0.96720
500+
$0.75010
1,000+
$0.59219
2,500+
$0.55271
5,000+
$0.52507
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IRF830PBF by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IRF830PBF ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Toshiba Semiconductor and Storage
SSM6J216FE,LF
NXP USA Inc.
BUK9510-55A,127
STMicroelectronics
STW70N60DM6
Infineon Technologies
IPP076N12N3GXKSA1
IXYS
IXTP90N15T
onsemi
FCP36N60N
IXYS
IXTK8N150L
Alpha & Omega Semiconductor Inc.
AON2406
Alpha & Omega Semiconductor Inc.
AOK42S60L
IXYS