FCP36N60N
onsemi
onsemi
MOSFET N-CH 600V 36A TO220-3
$9.82
Available to order
Reference Price (USD)
1+
$7.35000
10+
$6.63900
100+
$5.49990
500+
$4.64582
1,000+
$4.07642
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FCP36N60N, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FCP36N60N is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 312W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
IXYS
IXTK8N150L
Alpha & Omega Semiconductor Inc.
AON2406
Alpha & Omega Semiconductor Inc.
AOK42S60L
IXYS
IXFT50N30Q3
Fairchild Semiconductor
HUF76437S3S
Infineon Technologies
SPD30N03S2L-07 G
Taiwan Semiconductor Corporation
TSM60N380CP ROG
Vishay Siliconix
SISA10DN-T1-GE3
onsemi
2SK3707-1E
NXP USA Inc.