PJP6NA90_T0_00001
Panjit International Inc.
Panjit International Inc.
900V N-CHANNEL MOSFET
$2.03
Available to order
Reference Price (USD)
1+
$2.03000
500+
$2.0097
1000+
$1.9894
1500+
$1.9691
2000+
$1.9488
2500+
$1.9285
Exquisite packaging
Discount
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Discover PJP6NA90_T0_00001, a versatile Transistors - FETs, MOSFETs - Single solution from Panjit International Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.3Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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