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SQM40P10-40L_GE3

Vishay Siliconix
SQM40P10-40L_GE3 Preview
Vishay Siliconix
MOSFET P-CH 100V 40A TO263
$2.73
Available to order
Reference Price (USD)
800+
$1.20965
1,600+
$1.11012
2,400+
$1.03356
5,600+
$0.99528
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D²Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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