IXFX32N100Q3
IXYS
IXYS
MOSFET N-CH 1000V 32A PLUS247-3
$32.99
Available to order
Reference Price (USD)
1+
$22.34000
30+
$18.98900
120+
$17.64858
510+
$15.63800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IXFX32N100Q3 from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXFX32N100Q3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
Infineon Technologies
IRLML2246TRPBF
STMicroelectronics
STFW40N60M2
Microchip Technology
APT11F80B
Microchip Technology
APT18M80B
Fairchild Semiconductor
ISL9N303AS3
onsemi
NTTFS6H850NLTAG
Infineon Technologies
IPP60R022S7XKSA1
Diodes Incorporated
DMP6110SFDF-13
Vishay Siliconix
SIHG15N60E-GE3
Rohm Semiconductor