IRL1004PBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 130A TO220AB
$3.31
Available to order
Reference Price (USD)
1+
$3.59000
10+
$3.25800
100+
$2.65510
500+
$2.10718
1,000+
$1.77840
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRL1004PBF by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRL1004PBF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 78A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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