SQM120N04-1M9_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 120A TO263
$2.21
Available to order
Reference Price (USD)
800+
$1.65000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SQM120N04-1M9_GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SQM120N04-1M9_GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8790 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIDR402DP-T1-GE3
Nexperia USA Inc.
BUK9Y41-80E,115
onsemi
2SK1459LS
onsemi
FDD86369-F085
Vishay Siliconix
IRFR430ATRLPBF
Panjit International Inc.
PJQ2460_R1_00001
Rohm Semiconductor
RD3T075CNTL1
Fairchild Semiconductor
NDB4060
onsemi
NVH4L045N065SC1
Diodes Incorporated