DMT6004SCT
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 100A TO220-3
$2.08
Available to order
Reference Price (USD)
1+
$2.20000
50+
$1.80100
100+
$1.63310
500+
$1.29732
1,000+
$1.09585
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMT6004SCT, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMT6004SCT provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 113W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Alpha & Omega Semiconductor Inc.
AOD482
Texas Instruments
CSD18510Q5B
Infineon Technologies
IPI120N06S402AKSA2
EPC
EPC2030
Panjit International Inc.
PJS6412_S1_00001
Infineon Technologies
IRFSL3006PBF
onsemi
FQA55N25
Diodes Incorporated
DMN3020UTS-13
Vishay Siliconix
SI1443EDH-T1-GE3
Infineon Technologies