NVH4L045N065SC1
onsemi
onsemi
SIC MOS TO247-4L 650V
$6.99
Available to order
Reference Price (USD)
1+
$6.99047
500+
$6.9205653
1000+
$6.8506606
1500+
$6.7807559
2000+
$6.7108512
2500+
$6.6409465
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NVH4L045N065SC1 by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NVH4L045N065SC1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Diodes Incorporated
DMT6004SCT
Alpha & Omega Semiconductor Inc.
AOD482
Texas Instruments
CSD18510Q5B
Infineon Technologies
IPI120N06S402AKSA2
EPC
EPC2030
Panjit International Inc.
PJS6412_S1_00001
Infineon Technologies
IRFSL3006PBF
onsemi
FQA55N25
Diodes Incorporated
DMN3020UTS-13
Vishay Siliconix