SQJ960EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 60V 8A
$2.27
Available to order
Reference Price (USD)
3,000+
$1.00965
6,000+
$0.97461
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQJ960EP-T1_GE3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SQJ960EP-T1_GE3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
- Power - Max: 34W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
Fairchild Semiconductor
RF1K4915496
Taiwan Semiconductor Corporation
TSM6968SDCA RVG
Diodes Incorporated
DMC4029SK4-13
Infineon Technologies
AUIRF7316QTR
Transphorm
TPD3215M
Diodes Incorporated
DMNH6042SSDQ-13
Diodes Incorporated
DMN2028UFU-7
Panjit International Inc.
PJS6604_S2_00001
Microchip Technology
APTC60AM45B1G
Vishay Siliconix