TPD3215M
Transphorm
Transphorm
GANFET 2N-CH 600V 70A MODULE
$175.13
Available to order
Reference Price (USD)
1+
$178.83000
10+
$172.66200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with Transphorm s TPD3215M, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how TPD3215M can meet your specific needs and boost your application performance.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V
- Power - Max: 470W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Diodes Incorporated
DMNH6042SSDQ-13
Diodes Incorporated
DMN2028UFU-7
Panjit International Inc.
PJS6604_S2_00001
Microchip Technology
APTC60AM45B1G
Vishay Siliconix
SI7252ADP-T1-GE3
Fairchild Semiconductor
FDC6432SH
Fairchild Semiconductor
FDSS2407
Infineon Technologies
IRF8910TRPBF
onsemi
FDC6301N
onsemi