PJS6604_S2_00001
Panjit International Inc.
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
$0.44
Available to order
Reference Price (USD)
1+
$0.44000
500+
$0.4356
1000+
$0.4312
1500+
$0.4268
2000+
$0.4224
2500+
$0.418
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PJS6604_S2_00001 from Panjit International Inc. is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, PJS6604_S2_00001 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Panjit International Inc. s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 3.1A (Ta)
- Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V, 98mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA, 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 447pF @ 15V, 443pF @ 15V
- Power - Max: 1.25W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6
- Supplier Device Package: SOT-23-6
Related Products
Microchip Technology
APTC60AM45B1G
Vishay Siliconix
SI7252ADP-T1-GE3
Fairchild Semiconductor
FDC6432SH
Fairchild Semiconductor
FDSS2407
Infineon Technologies
IRF8910TRPBF
onsemi
FDC6301N
onsemi
NTHD4401PT3G
Diodes Incorporated
ZXMN10A08DN8TA
Diodes Incorporated
DMN3022LDG-13
Advanced Linear Devices Inc.