SQJ152ELP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 123A PPAK SO-8
$0.93
Available to order
Reference Price (USD)
1+
$0.93000
500+
$0.9207
1000+
$0.9114
1500+
$0.9021
2000+
$0.8928
2500+
$0.8835
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SQJ152ELP-T1_GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SQJ152ELP-T1_GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
NTHL060N065SC1
Micro Commercial Co
SIL05N06A-TP
Renesas Electronics America Inc
2SK974L-E
Vishay Siliconix
SIHA690N60E-GE3
Renesas
NP110N055PUJ-E1B-AY
Renesas Electronics America Inc
2SK2111-T1-AY
Diodes Incorporated
DMT6008LFG-7
IXYS
IXTQ48N65X2M
STMicroelectronics
STL22N65M5
Diodes Incorporated