NTHL060N065SC1
onsemi
onsemi
SIC MOS TO247-3L 650V
$12.50
Available to order
Reference Price (USD)
1+
$12.50000
500+
$12.375
1000+
$12.25
1500+
$12.125
2000+
$12
2500+
$11.875
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTHL060N065SC1 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTHL060N065SC1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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