NP110N055PUJ-E1B-AY
Renesas
Renesas
NP110N055PUJ-E1B-AY - SWITCHINGN
$5.51
Available to order
Reference Price (USD)
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$5.51204
500+
$5.4569196
1000+
$5.4017992
1500+
$5.3466788
2000+
$5.2915584
2500+
$5.236438
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Discover NP110N055PUJ-E1B-AY, a versatile Transistors - FETs, MOSFETs - Single solution from Renesas, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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