SPW32N50C3FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 560V 32A TO247-3
$11.29
Available to order
Reference Price (USD)
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$9.31000
10+
$8.43800
240+
$7.04479
720+
$5.99996
1,200+
$5.30338
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SPW32N50C3FKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SPW32N50C3FKSA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1.8mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 284W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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