SPI08N50C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 560V 7.6A TO262-3
$0.77
Available to order
Reference Price (USD)
1+
$0.77000
500+
$0.7623
1000+
$0.7546
1500+
$0.7469
2000+
$0.7392
2500+
$0.7315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SPI08N50C3XKSA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SPI08N50C3XKSA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Rohm Semiconductor
RCD100N19TL
Infineon Technologies
IQE006NE2LM5CGATMA1
Diodes Incorporated
DMNH45M7SCT
onsemi
NTB5405NT4G
IXYS
IXTA76P10T
PN Junction Semiconductor
P3M171K0F3
STMicroelectronics
STB100NF03L-03T4
NXP USA Inc.
BUK9245-55A,118
onsemi
NTMTS0D7N06CTXG
Infineon Technologies