P3M171K0F3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1700V 5.5A TO-220F-3
$6.10
Available to order
Reference Price (USD)
1+
$6.10000
500+
$6.039
1000+
$5.978
1500+
$5.917
2000+
$5.856
2500+
$5.795
Exquisite packaging
Discount
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Experience the power of P3M171K0F3, a premium Transistors - FETs, MOSFETs - Single from PN Junction Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, P3M171K0F3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 5.5A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 51W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-2L
- Package / Case: TO-220F-2
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