IQE006NE2LM5CGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 41A/298A IPAK
$2.92
Available to order
Reference Price (USD)
1+
$2.92000
500+
$2.8908
1000+
$2.8616
1500+
$2.8324
2000+
$2.8032
2500+
$2.774
Exquisite packaging
Discount
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IQE006NE2LM5CGATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IQE006NE2LM5CGATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251AA)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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