SPA15N65C3XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 15A TO220-3
$3.60
Available to order
Reference Price (USD)
500+
$2.48464
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SPA15N65C3XKSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SPA15N65C3XKSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 675µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 34W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
Related Products
Nexperia USA Inc.
BUK6D210-60EX
onsemi
NTMFS4C58NT1G
IXYS
IXFH60N65X2-4
onsemi
NTMFS4923NET1G
Vishay Siliconix
SUP40012EL-GE3
Nexperia USA Inc.
BUK7Y38-100EX
onsemi
NVD4809NT4G
Microchip Technology
TN0620N3-G-P014
Vishay Siliconix
SIR846ADP-T1-GE3
onsemi