BUK6D210-60EX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 2.1A/5.7A 6DFN
$0.43
Available to order
Reference Price (USD)
1+
$0.43000
500+
$0.4257
1000+
$0.4214
1500+
$0.4171
2000+
$0.4128
2500+
$0.4085
Exquisite packaging
Discount
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Discover BUK6D210-60EX, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 15W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
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