SISS73DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 150V 4.4A/16.2A PPAK
$1.58
Available to order
Reference Price (USD)
1+
$1.58000
500+
$1.5642
1000+
$1.5484
1500+
$1.5326
2000+
$1.5168
2500+
$1.501
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SISS73DN-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SISS73DN-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 719 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
Related Products
onsemi
FCH76N60N
Alpha & Omega Semiconductor Inc.
AOTF8N50
Microchip Technology
APT14M100B
onsemi
NTHD4N02FT1G
UnitedSiC
UF3SC065007K4S
NTE Electronics, Inc
NTE2396
STMicroelectronics
STP100N10F7
Vishay Siliconix
SIHB6N65E-GE3
Microchip Technology
TN5325N3-G-P002
Nexperia USA Inc.