NTE2396
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CHANNEL 100V 28A TO220
$5.41
Available to order
Reference Price (USD)
1+
$5.41000
500+
$5.3559
1000+
$5.3018
1500+
$5.2477
2000+
$5.1936
2500+
$5.1395
Exquisite packaging
Discount
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Experience the power of NTE2396, a premium Transistors - FETs, MOSFETs - Single from NTE Electronics, Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTE2396 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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