NTHD4N02FT1G
onsemi
onsemi
MOSFET N-CH 20V 2.9A CHIPFET
$0.19
Available to order
Reference Price (USD)
1+
$0.19000
500+
$0.1881
1000+
$0.1862
1500+
$0.1843
2000+
$0.1824
2500+
$0.1805
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTHD4N02FT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTHD4N02FT1G inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 910mW (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET™
- Package / Case: 8-SMD, Flat Lead
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