SIS435DNT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 30A PPAK1212-8
$0.82
Available to order
Reference Price (USD)
3,000+
$0.33900
6,000+
$0.31700
15,000+
$0.30600
30,000+
$0.30000
Exquisite packaging
Discount
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Vishay Siliconix presents SIS435DNT-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIS435DNT-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 13A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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