EPC2207
EPC
EPC
TRANS GAN 200V DIE .022OHM
$3.38
Available to order
Reference Price (USD)
1+
$3.38000
500+
$3.3462
1000+
$3.3124
1500+
$3.2786
2000+
$3.2448
2500+
$3.211
Exquisite packaging
Discount
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EPC2207 by EPC is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, EPC2207 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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