FDB2552
onsemi
onsemi
MOSFET N-CH 150V 5A/37A TO263AB
$2.81
Available to order
Reference Price (USD)
800+
$1.39641
1,600+
$1.28717
2,400+
$1.20314
5,600+
$1.16113
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance FDB2552 from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FDB2552 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NTD4906NA-35G
Sanken
EKI07117
EPC
EPC2207
Vishay Siliconix
SQP10250E_GE3
Toshiba Semiconductor and Storage
TJ50S06M3L,LXHQ
Diodes Incorporated
ZVN4306A
onsemi
NTD6416ANLT4G
Infineon Technologies
IPW60R041P6FKSA1
Infineon Technologies
IPD90N06S4L03ATMA2
Alpha & Omega Semiconductor Inc.