SIR500DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 30 V (D-S) 150C MOSFET
$1.72
Available to order
Reference Price (USD)
1+
$1.72000
500+
$1.7028
1000+
$1.6856
1500+
$1.6684
2000+
$1.6512
2500+
$1.634
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SIR500DP-T1-RE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIR500DP-T1-RE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.47mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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