RM130N100HD
Rectron USA
Rectron USA
MOSFET N-CH 100V 130A TO263-2
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
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Boost your electronic applications with RM130N100HD, a reliable Transistors - FETs, MOSFETs - Single by Rectron USA. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RM130N100HD meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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