PJQ4416EP_R2_00001
Panjit International Inc.
Panjit International Inc.
20V N-CHANNEL ENHANCEMENT MODE M
$0.58
Available to order
Reference Price (USD)
1+
$0.58000
500+
$0.5742
1000+
$0.5684
1500+
$0.5626
2000+
$0.5568
2500+
$0.551
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance PJQ4416EP_R2_00001 from Panjit International Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, PJQ4416EP_R2_00001 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1117 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 26W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN3333-8
- Package / Case: 8-PowerVDFN
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