SIHU6N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 5A TO251AA
$1.51
Available to order
Reference Price (USD)
1+
$1.51000
500+
$1.4949
1000+
$1.4798
1500+
$1.4647
2000+
$1.4496
2500+
$1.4345
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SIHU6N80AE-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIHU6N80AE-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251AA
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Vishay Siliconix
SIRA90DP-T1-GE3
Renesas Electronics America Inc
2SK680A-T2-AZ
Infineon Technologies
ISZ0804NLSATMA1
Fairchild Semiconductor
FCPF190N60E-F152
Wolfspeed, Inc.
PC3M0060065L
Infineon Technologies
IPW65R110CFD7XKSA1
Renesas Electronics America Inc
2SJ302-Z-AZ
onsemi
NTC020N120SC1
onsemi
FDS6673BZ-G
onsemi