FCPF190N60E-F152
Fairchild Semiconductor
Fairchild Semiconductor
FCPF190N60E - POWER MOSFET N-CHA
$1.35
Available to order
Reference Price (USD)
1+
$1.35199
500+
$1.3384701
1000+
$1.3249502
1500+
$1.3114303
2000+
$1.2979104
2500+
$1.2843905
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FCPF190N60E-F152, a reliable Transistors - FETs, MOSFETs - Single by Fairchild Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FCPF190N60E-F152 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.6A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
Related Products
Wolfspeed, Inc.
PC3M0060065L
Infineon Technologies
IPW65R110CFD7XKSA1
Renesas Electronics America Inc
2SJ302-Z-AZ
onsemi
NTC020N120SC1
onsemi
FDS6673BZ-G
onsemi
FDA16N50LDTU
Diodes Incorporated
DMP3021SFVW-13
Harris Corporation
IRF841
Infineon Technologies
SPP03N60S5XKSA1
Diodes Incorporated