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NTC020N120SC1

onsemi
NTC020N120SC1 Preview
onsemi
SIC MOS WAFER SALES 20MOHM 1200V
$38.50
Available to order
Reference Price (USD)
1+
$38.49500
500+
$38.11005
1000+
$37.7251
1500+
$37.34015
2000+
$36.9552
2500+
$36.57025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 20 V
  • Vgs (Max): +25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 535W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Die
  • Package / Case: Die

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