SIHP15N60E-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 15A TO220AB
$1.75
Available to order
Reference Price (USD)
1+
$3.37000
10+
$3.02100
100+
$2.49630
500+
$2.04156
1,000+
$1.73840
3,000+
$1.65678
5,000+
$1.59848
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIHP15N60E-E3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIHP15N60E-E3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Nexperia USA Inc.
PMPB8XNX
STMicroelectronics
STW11NM80
Infineon Technologies
IPB65R380C6
Renesas Electronics America Inc
NP80N055PDG-E1B-AY
Infineon Technologies
IPS105N03LGAKMA1
Infineon Technologies
BSP170PH6327XTSA1
Vishay Siliconix
IRFIZ48GPBF
Wolfspeed, Inc.
C2M0045170D
Fairchild Semiconductor
HUF76009P3
Infineon Technologies