IPS105N03LGAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 35A TO251-3
$0.17
Available to order
Reference Price (USD)
1+
$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPS105N03LGAKMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPS105N03LGAKMA1 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-11
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Infineon Technologies
BSP170PH6327XTSA1
Vishay Siliconix
IRFIZ48GPBF
Wolfspeed, Inc.
C2M0045170D
Fairchild Semiconductor
HUF76009P3
Infineon Technologies
IRL2910STRRPBF
onsemi
FQPF7P20
Nexperia USA Inc.
PSMN6R0-30YLB,115
Nexperia USA Inc.
PSMN1R2-55SLH
onsemi
CPH3431-TL-E
Infineon Technologies