SIHFBF30S-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CHANNEL 900V
$1.96
Available to order
Reference Price (USD)
1+
$1.96000
500+
$1.9404
1000+
$1.9208
1500+
$1.9012
2000+
$1.8816
2500+
$1.862
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with SIHFBF30S-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SIHFBF30S-GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
FQP5N20L
Infineon Technologies
IPB80P03P4L07ATMA1
Vishay Siliconix
IRFR9120TRPBF
Nexperia USA Inc.
PSMN2R8-40YSDX
Rohm Semiconductor
RS1L145GNTB
Fairchild Semiconductor
HUF75645S3ST_NL
Fairchild Semiconductor
FDB8860-F085
STMicroelectronics
STB20NM50FDT4
Vishay Siliconix
SQ4431EY-T1_BE3
Infineon Technologies