IPB80P03P4L07ATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 80A TO263-3
$1.50
Available to order
Reference Price (USD)
1,000+
$0.76643
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IPB80P03P4L07ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPB80P03P4L07ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
IRFR9120TRPBF
Nexperia USA Inc.
PSMN2R8-40YSDX
Rohm Semiconductor
RS1L145GNTB
Fairchild Semiconductor
HUF75645S3ST_NL
Fairchild Semiconductor
FDB8860-F085
STMicroelectronics
STB20NM50FDT4
Vishay Siliconix
SQ4431EY-T1_BE3
Infineon Technologies
SPB17N80C3ATMA1
Infineon Technologies
IPC100N04S5L2R6ATMA1
Fairchild Semiconductor