SQ4431EY-T1_BE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 10.8A 8SOIC
$1.08
Available to order
Reference Price (USD)
1+
$1.08000
500+
$1.0692
1000+
$1.0584
1500+
$1.0476
2000+
$1.0368
2500+
$1.026
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SQ4431EY-T1_BE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SQ4431EY-T1_BE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
SPB17N80C3ATMA1
Infineon Technologies
IPC100N04S5L2R6ATMA1
Fairchild Semiconductor
FDS8878
Nexperia USA Inc.
PMV45EN2VL
Fairchild Semiconductor
FQAF44N08
onsemi
FQP13N50C
Vishay Siliconix
IRFR024TRPBF
onsemi
FDMT80040DC
Vishay Siliconix
IRFP9240PBF
Fairchild Semiconductor