SIHA6N65E-E3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CHANNEL 650V 7A TO220
$2.13
Available to order
Reference Price (USD)
1+
$2.24000
10+
$2.02000
100+
$1.62360
500+
$1.26280
1,000+
$1.04632
3,000+
$0.97416
5,000+
$0.93808
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SIHA6N65E-E3 by Vishay Siliconix is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SIHA6N65E-E3 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Toshiba Semiconductor and Storage
SSM3K376R,LF
STMicroelectronics
STB27NM60ND
Diodes Incorporated
2N7002T-7-F
onsemi
FCP190N65F
NXP USA Inc.
PHT6N06LT,135
Diodes Incorporated
DMG6402LVT-7
Vishay Siliconix
SI6423ADQ-T1-GE3
onsemi
NVMFS5C430NLAFT1G
Vishay Siliconix
SI2307CDS-T1-E3
Infineon Technologies