BSC889N03MSG
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BSC889N03MSG by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSC889N03MSG ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Toshiba Semiconductor and Storage
SSM3K122TU,LF
Renesas Electronics America Inc
2SK2084L-E
Toshiba Semiconductor and Storage
TK40E06N1,S1X
IXYS
IXFA7N100P
Infineon Technologies
SPI07N65C3
Infineon Technologies
AUIRFR2905ZTR
IXYS
IXTQ160N10T
Fairchild Semiconductor
HUFA76609D3ST
Fairchild Semiconductor
FQPF17N40T
STMicroelectronics