2N7002T-7-F
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT-523
$0.44
Available to order
Reference Price (USD)
3,000+
$0.08400
6,000+
$0.07630
15,000+
$0.06860
30,000+
$0.06475
75,000+
$0.05821
150,000+
$0.05628
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents 2N7002T-7-F, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, 2N7002T-7-F delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
Related Products
onsemi
FCP190N65F
NXP USA Inc.
PHT6N06LT,135
Diodes Incorporated
DMG6402LVT-7
Vishay Siliconix
SI6423ADQ-T1-GE3
onsemi
NVMFS5C430NLAFT1G
Vishay Siliconix
SI2307CDS-T1-E3
Infineon Technologies
BSC889N03MSG
Toshiba Semiconductor and Storage
SSM3K122TU,LF
Renesas Electronics America Inc
2SK2084L-E
Toshiba Semiconductor and Storage