SIHA11N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 8A TO220
$2.10
Available to order
Reference Price (USD)
1+
$2.10000
500+
$2.079
1000+
$2.058
1500+
$2.037
2000+
$2.016
2500+
$1.995
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SIHA11N80AE-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIHA11N80AE-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
Renesas Electronics America Inc
2SK2070-AZ
Renesas Electronics America Inc
2SJ214STL-E
Renesas Electronics America Inc
RJK0397DPA-02#J53
Renesas Electronics America Inc
RJK0660DPA-00#J5A
Infineon Technologies
IPBE65R145CFD7AATMA1
Infineon Technologies
BSB012N03LX3G
Goford Semiconductor
G09P02L
Diodes Incorporated
DMN6069SFG-7
Nexperia USA Inc.
BUK9Y7R0-60ELX
onsemi