IPBE65R145CFD7AATMA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE PG-TO263-7
$4.73
Available to order
Reference Price (USD)
1+
$4.73320
500+
$4.685868
1000+
$4.638536
1500+
$4.591204
2000+
$4.543872
2500+
$4.49654
Exquisite packaging
Discount
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IPBE65R145CFD7AATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPBE65R145CFD7AATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 420µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-11
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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