G09P02L
Goford Semiconductor
Goford Semiconductor
P20V,RD(MAX)<23M@-4.5V,RD(MAX)<3
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose G09P02L by Goford Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with G09P02L inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMN6069SFG-7
Nexperia USA Inc.
BUK9Y7R0-60ELX
onsemi
NTD4404NT4G
onsemi
NVMTS1D6N10MCTXG
Micro Commercial Co
MCM1567-TP
Nexperia USA Inc.
PMPB07R3ENAX
Diodes Incorporated
DMTH3004LFG-13
onsemi
NVTFWS016N06CTAG
STMicroelectronics
STL33N60M6
Infineon Technologies