SIDR390DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 69.9A/100A PPAK
$2.71
Available to order
Reference Price (USD)
1+
$2.71000
500+
$2.6829
1000+
$2.6558
1500+
$2.6287
2000+
$2.6016
2500+
$2.5745
Exquisite packaging
Discount
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Enhance your circuit performance with SIDR390DP-T1-RE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SIDR390DP-T1-RE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 69.9A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
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